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Vishay Intertechnology Electronic Components Datasheet

SI1400DL Datasheet

N-Channel 20-V (D-S) MOSFET

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N-Channel 20-V (D-S) MOSFET
Si1400DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.150 @ VGS = 4.5 V
20
0.235 @ VGS = 2.5 V
ID (A)
1.7
1.3
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Top View
Marking Code
ND XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20
"12
1.7 1.6
1.2 1.0
5
0.8
0.625
0.8
0.568
0.40
0.295
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71179
S-05630—Rev. B, 11-Feb-02
Symbol
RthJA
RthJF
Typical
165
180
105
Maximum
200
220
130
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI1400DL Datasheet

N-Channel 20-V (D-S) MOSFET

No Preview Available !

Si1400DL
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "12 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 85_C
VDS w 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 1.7 A
VGS = 2.5 V, ID = 1.3 A
VDS = 10 V, ID = 1.7 A
IS = 0.8 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 4.5 V, ID = 1.7 A
VDD = 10 V, RL = 20 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
IF = 0.8 A, di/dt = 100 A/ms
Min Typ Max Unit
0.6 V
"100
nA
1
mA
5
2A
0.123
0.195
5
0.78
0.150
0.235
1.1
W
S
V
2.1 4.0
0.3 nC
0.4
10 17
30 50
14 25 ns
8 15
30 50
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
5
2.5 V
VGS = 4.5 thru 3 V
4
Transfer Characteristics
5
4
33
2 2V
1
1.5 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS Drain-to-Source Voltage (V)
2
TC = 125_C
1
25_C
55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 71179
S-05630Rev. B, 11-Feb-02


Part Number SI1400DL
Description N-Channel 20-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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