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Vishay Intertechnology Electronic Components Datasheet

SI1404DH Datasheet

N-Channel 25-V (D-S) MOSFET

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N-Channel 25-V (D-S) MOSFET
Si1404DH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.35 @ VGS = 4.5 V
25
0.45 @ VGS = 2.5 V
ID (A)
1.57
1.39
FEATURES
D Thermally Enhanced SC-70 Package
APPLICATIONS
D Load Switch for Portable Devices
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Top View
Ordering Information: Si1404DH-T1
Marking Code
AD X
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
25
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
1.57
1.30
1.13
0.93
4
1.23
0.83
1.47
1.0
0.76
0.52
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72318
s-31510—Rev. A, 14-JuL-03
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
70
100
44
Maximum
85
125
55
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI1404DH Datasheet

N-Channel 25-V (D-S) MOSFET

No Preview Available !

Si1404DH
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "8 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 85_C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 1.57 A
VGS = 2.5 V, ID = 1.39 A
VDS = 15 V, ID = 0.75 A
IS = 1.23 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 1.57 A
VDD = 15 V, RL = 20 W
ID ^ 0.75 A, VGEN = 4.5 V, RG = 6 W
IF = 1.23 A, di/dt = 100 A/ms
Min Typ Max Unit
0.6 1.5 V
"100
nA
1
mA
5
4.0 A
0.280
0.355
0.35
0.45
W
1.5 S
0.85
1.2
V
1.85
2.8
0.17
nC
0.82
11 20
18 30
17 30 ns
11 20
30 60
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
Output Characteristics
VGS = 5 thru 3 V
2.5 V
2V
1 V 1.5 V
2468
VDS - Drain-to-Source Voltage (V)
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
Transfer Characteristics
TC = - 55_C
25_C
125_C
0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
3.5
www.vishay.com
2
Document Number: 72318
s-31510—Rev. A, 14-JuL-03


Part Number SI1404DH
Description N-Channel 25-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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