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Vishay Intertechnology Electronic Components Datasheet

SI1305DL Datasheet

P-Channel 1.8-V (G-S) MOSFET

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P-Channel 1.8-V (G-S) MOSFET
Si1305DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.280 @ VGS = - 4.5 V
- 8 0.380 @ VGS = - 2.5 V
0.530 @ VGS = - 1.8 V
ID (A)
- 0.92
- 0.79
- 0.67
SOT-323
SC-70 (3-LEADS)
G1
3D
S2
Top View
Marking Code
LB XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-8
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
- 0.92
- 0.86
- 0.74
- 0.69
-3
- 0.28
- 0.24
0.34
0.29
0.22
0.19
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71076
S-03721—Rev. C, 07-Apr-03
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
315
360
285
Maximum
375
430
340
Unit
_C/W
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2-1


Vishay Intertechnology Electronic Components Datasheet

SI1305DL Datasheet

P-Channel 1.8-V (G-S) MOSFET

No Preview Available !

Si1305DL
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = - 250 mA
VDS = 0 V, VGS = "8 V
VDS = - 6.4 V, VGS = 0 V
VDS = - 6.4 V, VGS = 0 V, TJ = 70_C
VDS = - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 1 A
VGS = - 2.5 V, ID = - 0.5 A
VGS = - 1.8 V, ID = - 0.3 A
VDS = - 5 V, ID = - 1 A
IS = - 0.3 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = - 4 V, VGS = - 4.5 V, ID = - 1 A
VDD = - 4 V, RL = 4 W
ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W
IF = - 1 A, di/dt = 100 A/ms
Min Typ Max Unit
- 0.45
-3
0.230
0.315
0.440
3.5
"100
-1
-5
0.280
0.380
0.530
- 1.2
V
nA
mA
A
W
S
V
2.6 4
0.6 nC
0.5
8 15
55 80
17 25 ns
12 20
27 45
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
8
VGS = 4.5 V
4 V 3.5 V
6
3V
2.5 V
4
2V
2
1.5 V
1V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
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2-2
Transfer Characteristics
6
TC = - 55_C
5
25_C
4
125_C
3
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage (V)
Document Number: 71076
S-03721—Rev. C, 07-Apr-03


Part Number SI1305DL
Description P-Channel 1.8-V (G-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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