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SI1302DL Datasheet

N-Channel 30-V (D-S) MOSFET

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N-Channel 30-V (D-S) MOSFET
Si1302DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
30 0.480 at VGS = 10 V
0.700 at VGS = 4.5 V
ID (A)
0.64
0.53
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
SC-70 (3-LEADS)
G1
3D
S2
Marking Code
KA XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1302DL-T1-E3 (Lead (Pb)-free)
Si1302DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current
TA = 25 °C
TA = 70 °C
ID
IDM
Continuous Diode Current (Diode Conduction)a
IS
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
5 s Steady State
30
± 20
0.64 0.60
0.51 0.48
1.5
0.26 0.23
0.31 0.28
0.20 0.18
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t 5 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
355
380
285
Maximum
400
450
340
Unit
°C/W
Document Number: 71249
S10-2140-Rev. F, 20-Sep-10
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI1302DL Datasheet

N-Channel 30-V (D-S) MOSFET

No Preview Available !

Si1302DL
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 70 °C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 0.6 A
VGS = 4.5 V, ID = 0.2 A
VGS = 15 V, ID = 0.6 A
IS = 0.23 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = 15 V, VGS = 10 V, ID = 0.6 A
VDD = 15 V, RL = 30
ID 0.5 A, VGEN = 10 V, Rg = 6
IF = 0.23 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
Typ
Max.
Unit
1 3V
± 100
nA
1
µA
5
1.5 A
0.410
0.600
0.480
0.700
0.75 S
0.8 1.2 V
0.86 1.4
0.24 nC
0.08
5 10
8 15
8 15 ns
7 15
15 30
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.0 1.0
0.8 VGS = 10 V thru 4 V
0.8
0.6 0.6
0.4
3V
0.2
0.0
0.0
0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
3.0
0.4
TC = 125 °C
0.2
25 °C
- 55 °C
0.0
0.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
4.0
www.vishay.com
2
Document Number: 71249
S10-2140-Rev. F, 20-Sep-10


Part Number SI1302DL
Description N-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 9 Pages
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