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Vishay Intertechnology Electronic Components Datasheet

SI1040X Datasheet

Load Switch with Level-Shift

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New Product
Si1040X
Vishay Siliconix
Load Switch with Level-Shift
PRODUCT SUMMARY
VDS2 (V)
rDS(on) (W)
1.8 to 8
0.625 @ VIN = 4.5 V
0.890 @ VIN = 2.5 V
1.25 @ VIN = 1.8 V
ID (A)
"0.43
"0.36
"0.3
FEATURES
D TrenchFETr Power MOSFET
D 1.8 to 8-V Input
D 1.5 to 8-V Logic Level Control
D Smallest LITTLE FOOTR Package: 1.6 mm x 1.6 mm
D 2000-V ESD Protection On Input Switch, VON/OFF
D Adjustable Slew-Rate
MARKING CODE
Marking Code
O
Pin 1
Identifier
WL
Lot Traceability
and Date Code
Part Number Code
DESCRIPTION
The Si1040X includes a p- and n-channel MOSFET in a single
SC89-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The n-channel,
with an external resistor, can be used as a level-shift to drive
the p-channel load-switch. The n-channel MOSFET has
internal ESD protection and can be driven by logic signals as
low as 1.5-V. The Si1040X operates on supply lines from 1.8
to 8 V, and can drive loads up to 0.43 A.
APPLICATION CIRCUITS
Si1040X
VIN
R1
4
Q2
6
2, 3
C1
6
ON/OFF
Ci
R2
5
Q1
1
R2
Co
VOUT
LOAD
GND
Switching Variation
R2 @ VIN = 2.5 V, R1 = 20 kW
20
tf
16
IL = 0.36 A
12 VON/OFF = 3 V
Ci = 10 mF
Co = 1 mF
8
4
tr
td(off)
td(on)
0
0 2 4 6 8 10
R2 (kW)
Note: For R2 switching variations with other VIN/R1
combinations See Typical Characteristics
COMPONENTS
R1 Pull-Up Resistor
Typical 10 kW to 1 mW*
R2 Optional Slew-Rate Control
Typical 0 to 100 kW*
C1 Optional Slew-Rate Control
Typical 1000 pF
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
Document Number: 71809
S-20008—Rev. A, 04-Mar-02
The Si1040X is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
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1


Vishay Intertechnology Electronic Components Datasheet

SI1040X Datasheet

Load Switch with Level-Shift

No Preview Available !

Si1040X
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM
SC89-6
Top View
R2 1 6 R1, C1
D2 2 5 ON/OFF
D2 3 4 S2
New Product
4
S2
ON/OFF
5
Si1040X
2, 3
Q2
6
D2
R1, C1
Q1
1
R2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Input Voltage
ON/OFF Voltage
Load Current
Continuous Intrinsic Diode Conductiona
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 W)
Continuousa, b
Pulsedb, c
VIN
VON/OFF
IL
IS
PD
TJ, Tstg
ESD
8
8
"0.43
"1.0
0.15
0.174
55 to 150
2
Unit
V
A
W
_C
kV
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (continuous current)a
Maximum Junction-to-Foot (Q2)
Symbol
RthJA
RthJC
Typical
600
450
Maximum
720
540
Unit
_C/W
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
OFF Characteristics
Reverse Leakage Current
Diode Forward Voltage
ON Characteristics
IFL VIN = 8 V, VON/OFF = 0 V
VSD IS = 0.15 A
Input Voltage Range
On-Resistance (p-channel) @ 1 A
On-State (p-channel) Drain-Current
VIN
rDS(on)
ID(on)
VON/OFF = 1.5 V, VIN = 4.5 V, ID = 0.43 A
VON/OFF = 1.5 V, VIN = 2.5 V, ID = 0.36 A
VON/OFF = 1.5 V, VIN = 1.8 V, ID = 0.3 A
VIN-OUT v 0.2 V, VIN = 5 V, VON/OFF = 1.5 V
VIN-OUT v 0.3 V, VIN = 3 V, VON/OFF = 1.5 V
Notes
a. Surface Mounted on FR4 Board.
b. VIN = 8 V, VON/OFF = 8 V, TA = 25_C.
c. Pulse test: pulse width v300 ms, duty cycle v2%.
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2
Min
1.8
1
0.8
Typ Max Unit
0.85
1
1.2
mA
V
0.500
0.710
1.0
8
0.625
0.890
1.25
V
W
A
Document Number: 71809
S-20008Rev. A, 04-Mar-02


Part Number SI1040X
Description Load Switch with Level-Shift
Maker Vishay Siliconix
Total Page 5 Pages
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