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Vishay Intertechnology Electronic Components Datasheet

SI1022R Datasheet

N-Channel 60-V (D-S) MOSFET

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N-Channel 60 V (D-S) MOSFET
Si1022R
Vishay Siliconix
PRODUCT SUMMARY
VDS(min.) (V)
RDS(on) ()
60 1.25 at VGS = 10 V
VGS(th) (V)
1 to 2.5
ID (mA)
330
SC-75A
(SOT-416)
G1
3D
S2
Marking Code: E
Ordering Information: Si1022R-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Low On-Resistance: 1.25
• Low Threshold: 2.5 V
• Low Input Capacitance: 30 pF
• Fast Switching Speed: 25 ns
• Low Input and Output Leakage
• Miniature Package
• ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid State Relays
BENEFITS
• Low Offset Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Error Voltage
• Small Board Area
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
Pulsed Drain Currenta
TA = 25 °C
TA = 85 °C
ID
IDM
Power Dissipationa
TA = 25 °C
TA = 85 °C
PD
Thermal Resistance, Maximum Junction-to-Ambienta
RthJA
Operating Junction and Storage Temperature Range
TJ, Tstg
Notes:
a. Surface mounted on FR4 board, power applied for t 10 s.
Limit
60
± 20
330
240
650
250
130
500
- 55 to 150
Unit
V
mA
mW
°C/W
°C
Document Number: 71331
S10-2687-Rev. F, 22-Nov-10
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI1022R Datasheet

N-Channel 60-V (D-S) MOSFET

No Preview Available !

Si1022R
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 10 µA
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = 0.25 mA
VDS = 0 V, VGS = ± 10 V
Gate-Body Leakage
IGSS
TJ = 85 °C
VDS = 0 V, VGS = ± 5 V
VDS = 50 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
TJ = 85 °C
VDS = 60 V, VGS = 0 V
On-State Drain Currenta
ID(on)
VDS = 10 V, VGS = 4.5 V
VDS = 7.5 V, VGS = 10 V
VGS = 4.5 V, ID = 200 mA
Drain-Source On-State Resistancea
RDS(on)
TJ = 125 °C
VGS = 10 V, ID = 500 mA
TJ = 125 °C
Forward Transconductancea
gfs VDS = 10 V, ID = 200 mA
Diode Forward Voltagea
VSD VGS = 0 V, IS = 200 mA
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Gate Charge
Qg VDS = 10 V, ID = 250 mA, VGS = 4.5 V
Switchingb, c
Turn-On Time
Turn-Off Time
t(on) VDD = 30 V, RL = 150 ,
t(off) ID = 200 mA, VGEN = 10 V, Rg = 10
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Min.
60
1
500
800
100
Typ. Max.
2.5
± 150
± 500
± 20
10
100
1
3.0
5.0
1.25
2.25
1.3
30
6
2.5
0.6
25
35
Unit
V
nA
µA
mA
mS
V
pF
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71331
S10-2687-Rev. F, 22-Nov-10


Part Number SI1022R
Description N-Channel 60-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 7 Pages
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