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Vishay Intertechnology Electronic Components Datasheet

SI1021R Datasheet

P-Channel 60-V (D-S) MOSFET

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P-Channel 60 V (D-S) MOSFET
Si1021R
Vishay Siliconix
PRODUCT SUMMARY
VDS(min.) (V)
- 60
RDS(on) ()
4.0 at VGS = - 10 V
VGS(th) (V)
- 1 to 3.0
ID (mA)
- 190
SC-75A
(SOT-416)
G1
S2
3D
Marking Code: F
Top View
Ordering Information: Si1021R-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• High-Side Switching
• Low On-Resistance: 4
• Low Threshold: - 2 V (typ.)
• Fast Switching Speed: 20 ns (typ.)
• Low Input Capacitance: 20 pF (typ.)
• Miniature Package
• ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
• Battery Operated Systems
• Power Supply Converter Circuits
• Solid-State Relays
BENEFITS
• Ease in Driving Switches
• Low Offset Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Easily Driven without Buffer
• Small Board Area
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Currentb
TA = 25 °C
TA = 85 °C
Power Dissipationa
Maximum Junction-to-Ambienta
TA = 25 °C
TA = 85 °C
Operating Junction and Storage Temperature Range
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
- 60
± 20
- 190
- 135
- 650
250
130
500
- 55 to 150
Unit
V
mA
mW
°C/W
°C
Document Number: 71410
S10-2687-Rev. F, 22-Nov-10
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI1021R Datasheet

P-Channel 60-V (D-S) MOSFET

No Preview Available !

Si1021R
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductance
Diode Forward Voltagea
Dynamic
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
VGS = 0 V, ID = - 10 µA
VDS = VGS, ID = - 0.25 mA
VDS = 0 V, VGS = ± 20 V
VDS = 0 V, VGS = ± 10 V
VDS = 0 V, VGS = ± 10 V, TJ = 85 °C
VDS = 0 V, VGS = ± 5 V
VDS = - 50 V, VGS = 0 V
VDS = - 50 V, VGS = 0 V, TJ = 85 °C
VDS = -10 V, VGS = - 4.5 V
VDS = -10 V, VGS = - 10 V
VGS = - 4.5 V, ID = - 25 mA
VGS = - 10 V, ID = - 500 mA
VGS = - 10 V, ID = - 500 mA, TJ = 125 °C
VDS = - 10 V, ID = - 100 mA
VDS = - 200 mA, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingb
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS = - 30 V, VGS = - 15 V, ID - 500 mA
VDS = - 25 V, VGS = 0 V, f = 1 MHz
Turn-On Time
Turn-Off Time
tON
tOFF
VDD = - 25 V, RL = 150 ,
ID - 200 mA, VGEN = - 10 V, Rg = 10
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Switching time is essentially independent of operating temperature.
Min.
- 60
-1
- 50
- 600
80
80
Typ. Max.
- 3.0
± 10
± 200
± 500
± 100
- 25
- 250
8
4
6
1.7
0.26
0.46
23
10
5
20
35
Unit
V
µA
nA
mA
mS
V
nC
pF
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71410
S10-2687-Rev. F, 22-Nov-10


Part Number SI1021R
Description P-Channel 60-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 7 Pages
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