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Vishay Intertechnology Electronic Components Datasheet

IRFUC20 Datasheet

Power MOSFET

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www.vishay.com
IRFRC20, IRFUC20, SiHFRC20, SiHFUC20
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
18
3.0
8.9
Single
4.4
D
DPAK
(TO-252)
D
IPAK
(TO-251)
D
G
GS
GD S
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFRC20, SiHFRC20)
• Straight Lead (IRFUC20, SiHFUC20)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFUC, SiHFUC series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and
Halogen-free
SiHFRC20-GE3
Lead (Pb)-free
IRFRC20PbF
SiHFRC20-E3
Note
a. See device orientation.
DPAK (TO-252)
SiHFRC20TRL-GE3
IRFRC20TRLPbFa
SiHFRC20TL-E3a
DPAK (TO-252)
SiHFRC20TR-GE3
IRFRC20TRPbFa
SiHFRC20T-E3a
DPAK (TO-252)
SiHFRC20TRR-GE3
IRFRC20TRRPbFa
SiHFRC20TR-E3a
IPAK (TO-251)
SiHFUC20-GE3
IRFUC20PbF
SiHFUC20-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)d
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 37 mH, Rg = 25 , IAS = 2.0 A (see fig. 12).
c. ISD 2.0 A, dI/dt 40 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
600
± 20
2.0
1.3
8.0
0.33
0.020
74
2.0
4.2
42
2.5
3.0
- 55 to + 150
260
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S13-0166-Rev. E, 04-Feb-13
1
Document Number: 91285
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

IRFUC20 Datasheet

Power MOSFET

No Preview Available !

www.vishay.com
IRFRC20, IRFUC20, SiHFRC20, SiHFUC20
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN.
-
-
-
TYP.
-
-
-
MAX.
110
50
3.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.2 Ab
VDS = 50 V, ID = 1.2 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 2.0 A, VDS = 360 V,
see fig. 6 and 13b
VDD = 300 V, ID = 2.0 A,
Rg = 18 , RD = 135 , see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
Drain-Source Body Diode Characteristics
MIN.
600
-
2.0
-
-
-
-
1.4
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
- -V
0.88 - V/°C
- 4.0 V
- ± 100 nA
- 100
μA
- 500
- 4.4
- -S
350 -
48 - pF
8.6 -
- 18
- 3.0 nC
- 8.9
10 -
23 -
ns
30 -
25 -
4.5 -
nH
7.5 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D - - 2.0
G
S
A
- - 8.0
Body Diode Voltage
VSD
TJ = 25 °C, IS = 2.0 A, VGS = 0 Vb
- - 1.6 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
- 290 580 ns
TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A/μsb
-
0.67 1.3
μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
S13-0166-Rev. E, 04-Feb-13
2
Document Number: 91285
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number IRFUC20
Description Power MOSFET
Maker Vishay Siliconix
PDF Download

IRFUC20 Datasheet PDF






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