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M2045S - (M2035S / M2045S) High Voltage Trench MOS Barrier Schottky Rectifier

Description

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Features

  • Guardring for overvoltage protection.
  • Lower power losses, high efficiency.
  • Low forward voltage drop.
  • High forward surge capability.
  • High frequency operation 3 2 1 1 2 CASE TO-220AB.
  • Solder Dip 260 °C, 40 seconds.
  • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

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Datasheet Details

Part number M2045S
Manufacturer Vishay
File Size 151.12 KB
Description (M2035S / M2045S) High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet M2045S Datasheet

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Full PDF Text Transcription (Reference)

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M2035S & M2045S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation 3 2 1 1 2 CASE TO-220AB • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, free-wheeling diodes, dc-to-dc converters or polarity protection applications.
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