M2045S-E3 - Schottky Barrier Rectifier

Vishay

Download the M2045S-E3 datasheet PDF. This datasheet also covers the M2035S-E3 variant, as both devices belong to the same schottky barrier rectifier family and are provided as variant models within a single manufacturer datasheet.

Key Features

Trench MOS Schottky technology.
Power pack.
Guardring for overvoltage protection.
Lower power losses, high efficiency.
Low forward voltage drop.
High forward surge capability.
High frequency operation.
Solder dip 275 °C max.10 s, per JESD 22-B106.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

M2045S-E3 schottky barrier rectifier by Vishay - Datasheet Preview — Note: The manufacturer provides a single datasheet file (M2035S-E3-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	M2045S-E3
Manufacturer	Vishay
File Size	113.18 KB
Description	Schottky Barrier Rectifier
Datasheet	M2045S-E3 Datasheet

Other Datasheets by Vishay

Part Number	Description
M2035S-E3	Schottky Barrier Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

www.vishay.com M2035S-E3, M2045S-E3 Vishay General Semiconductor Schottky Barrier Rectifier TO-220AB 3 2 1 12 3 CASE PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 35 V, 45 V IFSM VF at IF = 20 A 200 A 0.55 V TJ max. 150 °C Package TO-220AB Diode variations Single die FEATURES • Trench MOS Schottky technology • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max.10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.