* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106 .

For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PIN.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts