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VT3045BP - Trench MOS Barrier Schottky Rectifier

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • Compliant to RoHS Directive 2011/65/EU.
  • Halogen-free according to IEC 61249-2-21 definition 2 1.

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Datasheet Details

Part number VT3045BP
Manufacturer Vishay
File Size 171.27 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VT3045BP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VT3045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5 A TMBS® TO-220AC FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2011/65/EU • Halogen-free according to IEC 61249-2-21 definition 2 1 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PIN 1 PIN 2 CASE MECHANICAL DATA PRIMARY CHARACTERISTCS IF(DC) VRRM IFSM VF at IF = 30 A TOP max. (AC mode) TJ max. (DC forward current) 30 A 45 V 200 A 0.