VS-CPV364M4KPbF sip equivalent, igbt sip.
* Short circuit rated ultrafast: optimized for high speed, and short circuit rated to 10 μs at 125 °C, VGE = 15 V
* Fully isolated printed circuit board mount pac.
and where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector to emitter voltage
SYMBOL VCES
Continuo.
The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-driv.
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