VS-CPV363M4KPbF datasheet, igbt equivalent, Vishay

Features and benefits

* Short circuit rated ultrafast: optimized for high speed (see fig. 1 for current vs. frequency curve), and short circuit rated to 10 μs at 125 °C, VGE = 15 V
* F.

Application

and where space is at a premium. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Conti.

Description

The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-driv.

Image gallery