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VS-3C10ET07T-M3 Datasheet, Vishay

VS-3C10ET07T-M3 diode equivalent, 650v power sic gen 3 merged pin schottky diode.

VS-3C10ET07T-M3 Avg. rating / M : 1.0 rating-11

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VS-3C10ET07T-M3 Datasheet

Features and benefits


* Majority carrier diode using Schottky technology on SiC wide band gap material
* Improved VF and efficiency by thin wafer technology
* Positive VF temperatu.

Application

Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high spee.

Description

/ APPLICATIONS Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications.

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TAGS

VS-3C10ET07T-M3
650V
Power
SiC
Gen
Merged
PIN
Schottky
Diode
VS-3C12ET07S2L-M3
VS-300CNQ045PbF
VS-300MT160C
Vishay

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