* Majority carrier diode using Schottky technology on SiC wide band gap material
* Improved VF and efficiency by thin wafer technology
* Positive VF temperatu.

Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high spee.

/ APPLICATIONS Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications.

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