VBT6045CBP-M3 - Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
TJ 200 °C max. in solar bypass mode application.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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