logo

VBT3060G-E3 Datasheet, Vishay

VBT3060G-E3 rectifier equivalent, dual high voltage trench mos barrier schottky rectifier.

VBT3060G-E3 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 143.16KB)

VBT3060G-E3 Datasheet
VBT3060G-E3
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 143.16KB)

VBT3060G-E3 Datasheet

Features and benefits


* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum p.

Image gallery

VBT3060G-E3 Page 1 VBT3060G-E3 Page 2 VBT3060G-E3 Page 3

TAGS

VBT3060G-E3
Dual
High
Voltage
Trench
MOS
Barrier
Schottky
Rectifier
Vishay

Manufacturer


Vishay (https://www.vishay.com/)

Related datasheet

VBT3060C

VBT3060C-E3

VBT3045BP

VBT3045BP-M3

VBT3045C

VBT3045CBP

VBT3045CBP-E3

VBT3045CBP-M3

VBT3080C-E3

VBT3080S

VBT3080S-E3

VBT30L60C

VBT10200C

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts