* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per LF maximum peak of 245 .

For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRI.

VBT1545CBP-E3

VBT10200C

VBT10200C-E3

VBT10202C-M3

VBT1045BP

VBT1045C

VBT1045C-E3

VBT1045CBP

VBT1045CBP-M3

VBT1060C-E3

VBT1060C-M3

VBT1080C-M3

VBT1080S-E3

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