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VB60170G
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TMBS ®
TO-263AB
K
2 1
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
VB60170G
PIN 1
K
PIN 2
HEATSINK
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max.
2 x 30 A 170 V 210 A 0.
VB60170G Datasheet
