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VB60170G-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number VB60170G-E3
Manufacturer Vishay
File Size 99.99 KB
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VB60170G-E3 Datasheet

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Full PDF Text Transcription

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www.vishay.com VB60170G-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K 2 1 VB60170G PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 2 x 30 A 170 V 210 A 0.72 V 175 °C D2PAK (TO-263AB) Circuit configuration Common cathode FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.
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