• Part: VB60100C-M3
  • Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 83.93 KB
Download VB60100C-M3 Datasheet PDF
Vishay
VB60100C-M3
VB60100C-M3 is Dual High-Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
EATURES - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Low thermal resistance - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C - Material categorization: For definitions of pliance please see .vishay./doc?99912 VB60100C PIN 1 PIN 2 HEATSINK TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. PRIMARY CHARACTERISTICS Package TO-263AB IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Diode variation 2 x 30 A 100 V 320 A 0.66 V 150 °C mon cathode MECHANICAL DATA Case: TO-263AB Molding pound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, Ro HS-pliant, and mercial...