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VB40M120C-E3 Datasheet, Vishay

VB40M120C-E3 rectifier equivalent, dual high voltage trench mos barrier schottky rectifier.

VB40M120C-E3 Avg. rating / M : 1.0 rating-11

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VB40M120C-E3 Datasheet

Features and benefits


* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* AEC-Q101 qualified available - Automotive ord.

Application

For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECH.

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VB40M120C-E3 Page 1

TAGS

VB40M120C-E3
Dual
High
Voltage
Trench
MOS
Barrier
Schottky
Rectifier
VB40M120C-M3
VB40M120C
VB40M120CHM3
Vishay

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