VB20120SG rectifier equivalent, high-voltage trench mos barrier schottky rectifier.
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum p.
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters a.
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