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VB20120C Datasheet, Vishay

VB20120C rectifier equivalent, dual high-voltage trench mos barrier schottky rectifier.

VB20120C Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 220.33KB)

VB20120C Datasheet

Features and benefits


* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum p.

Application

For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters a.

Image gallery

VB20120C Page 1 VB20120C Page 2 VB20120C Page 3

TAGS

VB20120C
Dual
High-Voltage
Trench
MOS
Barrier
Schottky
Rectifier
Vishay

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