V60200PGW rectifier equivalent, dual high-voltage trench mos barrier schottky rectifier.
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106 .
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters a.
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