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V20120S Datasheet, Vishay

V20120S rectifier equivalent, high-voltage trench mos barrier schottky rectifier.

V20120S Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 138.43KB)

V20120S Datasheet

Features and benefits


* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per .

Application

For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse bat.

Image gallery

V20120S Page 1 V20120S Page 2 V20120S Page 3

TAGS

V20120S
High-Voltage
Trench
MOS
Barrier
Schottky
Rectifier
Vishay

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