V20120C rectifier equivalent, dual high-voltage trench mos barrier schottky rectifier.
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum p.
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters a.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 139.12KB)