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V10PM12-M3 - High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Key Features

  • Very low profile - typical height of 1.1 mm Available.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number V10PM12-M3
Manufacturer Vishay
File Size 92.96 KB
Description High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V10PM12-M3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com V10PM12-M3, V10PM12HM3 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 5 A TMBS® eSMP® Series K 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 FEATURES • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications.