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V10PM12HM3 - High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Download the V10PM12HM3 datasheet PDF. This datasheet also covers the V10PM12-M3 variant, as both devices belong to the same high current density surface mount trench mos barrier schottky rectifier family and are provided as variant models within a single manufacturer datasheet.

Features

  • Very low profile - typical height of 1.1 mm Available.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (V10PM12-M3-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number V10PM12HM3
Manufacturer Vishay
File Size 92.96 KB
Description High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V10PM12HM3 Datasheet

Full PDF Text Transcription

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www.vishay.com V10PM12-M3, V10PM12HM3 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 5 A TMBS® eSMP® Series K 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 FEATURES • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications.
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