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SiZF5300DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
3.3 mm
PowerPAIR® 3 x 3FS
V+
V+ LSG 3
4
GND 2
5
1
6
V+
1 3.3 mm Top View
GND
12 11
7 8 HSG 9 SW 10 SW SW
Bottom View
PRODUCT SUMMARY
VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration
30 0.00243 0.00351
9.5 125 a Dual
FEATURES • TrenchFET® Gen V power MOSFET
• Symmetric dual N-channel
• Flip chip technology optimal thermal design
• High side and low side MOSFETs form optimized combination for 50 % duty cycle
• Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching
• 100 % Rg and UIS tested • Material categorization: for definitions of compliance
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SiZF5300DT Datasheet
