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SiHP18N50C
Vishay Siliconix
Power MOSFET
TO-220AB
D
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
560 VGS = 10 V
76 21 29 Single
0.225
FEATURES
• Low figure-of-merit Ron x Qg • 100 % avalanche tested
Available
• High peak current capability • dv/dt ruggedness
Available
• Improved trr/Qrr • Improved gate charge
• High power dissipations capability
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.