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SiHP12N50E
Vishay Siliconix
E Series Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
550 VGS = 10 V
50 6 10 Single
0.380
FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses
• Low gate charge (Qg) • Avalanche energy rated (UIS)
Available
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