SiHH20N50E Description
SiHH20N50E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max.
SiHH20N50E Key Features
- pletely lead (Pb)-free device
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Kelvin connection for reduced gate noise
- Material categorization: for definitions of pliance