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SiHH26N60E - E Series Power MOSFET

Datasheet Summary

Features

  • Fully lead (Pb)-free device.
  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).
  • Kelvin connection for reduced gate noise.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiHH26N60E
Manufacturer Vishay
File Size 192.05 KB
Description E Series Power MOSFET
Datasheet download datasheet SiHH26N60E Datasheet
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www.vishay.com SiHH26N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 116 18 33 Single 0.117 PowerPAK® 8 x 8 4 1 2 3 3 Pin 4 G D Pin 1 Pin 2 Pin 3 S N-Channel MOSFET FEATURES • Fully lead (Pb)-free device • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Kelvin connection for reduced gate noise • Material categorization: for definitions of compliance please see www.vishay.
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