SiHA25N50E Datasheet | Vishay

FEATURES - Low figure-of-merit (FOM): Ron x Qg - Low input capacitance (Ciss) - Reduced switching and conduction losses - Low gate charge (Qg) - Avalanche energy rated (UIS) Available - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATONS - Hard switched topologies - Power factor correction power supplies (PFC) - Switch mode power supplies (SMPS) - puting - PC silver box / ATX power supplies - Lighting - Two stage LED lighting ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free Thin-Lead TO-220 FULLPAK Si HA25N50E-E3 Si HA25N50E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) e Pulsed drain current a Linear derating factor Single pulse avalanche energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope Reverse diode d V/dt d Soldering remendations (peak temperature) c VGS at 10 V TC = 25 °C TC = 100 °C VDS = 0 V to 80 % VDS for 10 s VDS VGS EAS PD TJ, Tstg d V/dt Mounting torque M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 m H, Rg = 25 , IAS = 4.4 A c. 1.6 mm from case d. ISD  ID, d I/dt = 100 A/μs, starting TJ = 25 °C e. Limited by maximum junction temperature THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient Maximum junction-to-case (drain) SYMBOL Rth JA Rth JC TYP. - LIMIT 500 ± 30 26 16 50 0.2 273...