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SIHA25N60EFL - Power MOSFET

Features

  • Reduced figure-of-merit (FOM): Ron x Qg.
  • Fast body diode MOSFET using E series technology.
  • Reduced trr, Qrr, and IRRM.
  • Increased robustness due to low Qrr.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses Available.
  • Avalanche energy rated (UIS).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription (Reference)

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www.vishay.com SiHA25N60EFL Vishay Siliconix E Series Power MOSFET with Fast Body Diode and Low Gate Charge Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 75 17 19 Single 0.127 ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free FEATURES • Reduced figure-of-merit (FOM): Ron x Qg • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Increased robustness due to low Qrr • Low input capacitance (Ciss) • Reduced switching and conduction losses Available • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.
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