900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

Si9939DY Datasheet

Complimentary 30-V (D-S) MOSFET

No Preview Available !

Si9939DY
Vishay Siliconix
Complimentary 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel
30
P-Channel
–30
rDS(on) (W)
0.05 @ VGS = 10 V
0.07 @ VGS = 6 V
0.08 @ VGS = 4.5 V
0.10 @ VGS = –10 V
0.12 @ VGS = –6V
0.16 @ VGS = –4.5 V
ID (A)
"3.5
"3
"2.5
"3.5
"3
"2.5
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8 D1
7 D1
6 D2
5 D2
D1 D1
G1
S1
N-Channel MOSFET
S2
G2
D2 D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30 –30
"20
"20
"3.5
"3.5
"2.8
"2.8
"20
"20
1.7 –1.7
2.0
1.3
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70146
S-00652—Rev. G, 27-Mar-00
Symbol
RthJA
N- or P- Channel
62.5
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
1


Vishay Intertechnology Electronic Components Datasheet

Si9939DY Datasheet

Complimentary 30-V (D-S) MOSFET

No Preview Available !

Si9939DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V
VDS = –24 V, VGS = 0 V
VDS = 15 V, VGS = 0 V, TJ = 70_C
VDS = –15 V, VGS = 0 V, TJ = 70_C
VDS w 5 V, VGS = 10 V
VDS v –5 V, VGS = –10 V
VDS w 5 V, VGS = 4.5 V
VDS v –5 V, VGS = –4.5 V
VGS = 10 V, ID = 3.5 A
VGS = –10 V, ID = 3.5 A
VGS = 6 V, ID = 3 A
VGS = – 6 V, ID = 3 A
VGS = 4.5 V, ID = 2.5 A
VGS = –4.5 V, ID = 2 A
VDS = 15 V, ID = 3.5 A
VDS = –15 V, ID = –3.5 A
IS = 1.7 A, VGS = 0 V
IS = –1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 10 V, VGS = 10 V, ID = 3.5 A
Qgs P-Channel
VDS = –10 V, VGS = –10 V
ID = –3.5 A
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
N-Channel
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
P-Channel
VDD = –15 V, RL = 15 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
Source-Drain Reverse Recovery Time
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
IF = 3.5 A, di/dt = 100 A/ms
Min Typa Max Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1.0
–1.0
20
–20
3.5
–3.5
"100
1
–1
5
–5
0.04
0.074
0.045
0.090
0.054
0.115
9
6
0.75
–0.75
0.05
0.10
0.07
0.12
0.08
0.16
1.2
–1.2
V
nA
mA
A
W
S
V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
14 35
14.5 35
1.9
nC
2.7
2.8
3.5
10 30
11 30
10 40
11 40
26 50
ns
30 50
10 50
12 50
60 120
40 100
www.vishay.com S FaxBack 408-970-5600
2
Document Number: 70146
S-00652—Rev. G, 27-Mar-00


Part Number Si9939DY
Description Complimentary 30-V (D-S) MOSFET
Maker Vishay
Total Page 7 Pages
PDF Download

Si9939DY Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 Si9939DY Complimentary 30-V (D-S) MOSFET
Vishay





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy