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Vishay Intertechnology Electronic Components Datasheet

Si9936DY Datasheet

Dual N-Channel 30-V (D-S) MOSFET

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Si9936DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.050 @ VGS = 10 V
0.080 @ VGS = 4.5 V
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8 D1
7 D1
6 D2
5 D2
ID (A)
"5.0
"3.9
D1 D1
D2 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
"5.0
"4.0
"40
1.7
2
1.3
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RthJA
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70128
S-00652—Rev. H, 27-Mar-00
Limit
62.5
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
1


Vishay Intertechnology Electronic Components Datasheet

Si9936DY Datasheet

Dual N-Channel 30-V (D-S) MOSFET

No Preview Available !

Si9936DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 5.0 A
VGS = 4.5 V, ID = 3.9 A
VDS = 15 V, ID = 5.0 A
IS =1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
VDS = 15 V, VGS = 10 V, ID = 5.0
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 5.0 A, di/dt = 100 A/ms
Min Typa Max Unit
1V
"100
nA
2
mA
20
40 A
0.039
0.052
0.050
0.080
W
10 S
0.72
1.2
V
13.5
35
1.9 nC
3
11 30
9 25
25 50 ns
10 50
60 160
www.vishay.com S FaxBack 408-970-5600
2
Document Number: 70128
S-00652—Rev. H, 27-Mar-00


Part Number Si9936DY
Description Dual N-Channel 30-V (D-S) MOSFET
Maker Vishay
Total Page 5 Pages
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