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Si5415AEDU - P-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • Thermally Enhanced PowerPAK® ChipFET Package - Small Footprint Area - Low On-Resistance.
  • 100 % Rg and UIS Tested.
  • Typical ESD Protection: 5500 V (HBM).
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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www.vishay.com Si5415AEDU Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () (Max.) 0.0096 at VGS = - 4.5 V 0.0132 at VGS = - 2.5 V 0.0220 at VGS = - 1.8 V ID (A)a - 25 - 25 -7 PowerPAK ChipFET Single Qg (Typ.) 43 nC 1 2 D3 DD 4 8D 7D 6S 5 D G S 1.9 mm Bottom View Ordering Information: Si5415AEDU-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® Power MOSFET • Thermally Enhanced PowerPAK® ChipFET Package - Small Footprint Area - Low On-Resistance • 100 % Rg and UIS Tested • Typical ESD Protection: 5500 V (HBM) • Material categorization: For definitions of compliance please see www.vishay.