SIHFZ48
FEATURES
60 0.018
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Dynamic d V/dt Rating Repetitive Avalanche Rated Ultra Low On-Resistance Very Low Thermal Resistance 175 °C Operating Temperature Fast Switching Ease of Paralleling pliant to Ro HS Directive 2002/95/EC
Available
Ro HS-
PLIANT
TO-220AB
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
S S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free Sn Pb TO-220AB IRFZ48Pb F Si HFZ48-E3 IRFZ48 Si HFZ48
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Pulsed Drain...
