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SIHFZ48L - Power MOSFET

Description

Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced process technology.
  • Surface-mount (IRFZ48S, SiHFZ48S).
  • Low-profile through-hole (SiHFZ48L).
  • 175 °C operating temperature Available.
  • Fast switching.
  • Material categorization: for definitions of Available compliance please see www. vishay. com/doc?99912 Note.
  • This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are.

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Full PDF Text Transcription

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www.vishay.com IRFZ48S, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET D I2PAK (TO-262) D2PAK (TO-263) S GD D G S G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 110 29 36 Single 0.018 FEATURES • Advanced process technology • Surface-mount (IRFZ48S, SiHFZ48S) • Low-profile through-hole (SiHFZ48L) • 175 °C operating temperature Available • Fast switching • Material categorization: for definitions of Available compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
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