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IRFPE40 - Power MOSFET

General Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Dynamic dV/dt rating.
  • Repetitive avalanche rated.
  • Isolated central mounting hole.
  • Fast switching.
  • Ease of paralleling.
  • Simple drive requirements.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number IRFPE40
Manufacturer Vishay
File Size 815.04 KB
Description Power MOSFET
Datasheet download datasheet IRFPE40 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com IRFPE40 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 800 VGS = 10 V 130 17 72 Single 2.0 D TO-247AC S D G G S N-Channel MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices.