Datasheet4U Logo Datasheet4U.com

IRFPE30 - Power MOSFET

Description

Third Generation Power MOSFETs from Vishay provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Dynamic dV/dt Rated.
  • Repetitive Avalanche Rated.
  • Isolated Central Mounting Hole.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

📥 Download Datasheet

Datasheet preview – IRFPE30

Datasheet Details

Part number IRFPE30
Manufacturer Vishay
File Size 1.50 MB
Description Power MOSFET
Datasheet download datasheet IRFPE30 Datasheet
Additional preview pages of the IRFPE30 datasheet.

📁 Similar Datasheet

  • IRFPE30 - Power MOSFET (International Rectifier)
  • IRFPE30PBF - HEXFET Power MOSFET (International Rectifier)
  • IRFPE40 - Power MOSFET (International Rectifier)
  • IRFPE40 - N-Channel MOSFET (INCHANGE)
  • IRFPE50 - Power MOSFET (International Rectifier)
  • IRFPE50PBF - Power MOSFET (International Rectifier)
  • IRFP040 - N-Channel Power MOSFET (International Rectifier)
  • IRFP042 - N-Channel Power MOSFET (International Rectifier)
  • IRFP044 - Power MOSFET (Power MOSFET)
  • IRFP044N - Power MOSFET (Power MOSFET)
Other Datasheets by Vishay

Full PDF Text Transcription

Click to expand full text
Power MOSFET IRFPE30, SiHFPE30 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 800 VGS = 10 V 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Single 3.0 TO-247AC D S D G G S N-Channel MOSFET FEATURES • Dynamic dV/dt Rated • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third Generation Power MOSFETs from Vishay provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices.
Published: |