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IRF737LC - Power MOSFET

General Description

This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs.

Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings.

Key Features

  • Reduced Gate Drive Requirement.
  • Enhanced 30 V VGS Rating.
  • Reduced Ciss, Coss, Crss.
  • Extremely High Frequency Operation.
  • Repetitive Avalanche Rated.
  • Lead (Pb)-free Available Available RoHS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power MOSFET IRF737LC, SiHF737LC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 300 VGS = 10 V 17 4.8 7.6 Single TO-220 D 0.75 S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss • Extremely High Frequency Operation • Repetitive Avalanche Rated • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings.