IRF7379QPbF mosfet equivalent, power mosfet.
of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make t.
The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in .
These HEXFET® Power MOSFET's in a Dual SO8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast .
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