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VSC160N10MS - N-Channel Advanced Power MOSFET

Datasheet Summary

Description

VSC160N10MS designed by the trench processing techniques to achieve extremely low on-resistance.

Features

  • Low On-Resistance Fast Switching Green Product (RoHS Compliant).

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Datasheet preview – VSC160N10MS

Datasheet Details

Part number VSC160N10MS
Manufacturer Vanguard Semiconductor
File Size 604.42 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSC160N10MS Datasheet
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Full PDF Text Transcription

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VSC160N10MS 100V/2.6A N-Channel Advanced Power MOSFET Features Low On-Resistance Fast Switching Green Product (RoHS Compliant) Description VSC160N10MS designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Power applications and a wide variety of other supply applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
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