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VSC080N06MS - N-Channel Advanced Power MOSFET

Features

  • N-Channel.
  • Enhancement mode.
  • Very low on-resistance.
  • Fast Switching.
  • High Effective.
  • Pb-free lead plating; RoHS compliant VSC080N06MS 60V/3A N-Channel Advanced Power MOSFET V DS R DS(on),typ@VGS=10V ID 60 70 3 SOT23 V mΩ A Part ID Package Type VSC080N06MS SOT23 Marking 003C Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage.

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Datasheet Details

Part number VSC080N06MS
Manufacturer Vanguard Semiconductor
File Size 398.85 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSC080N06MS Datasheet
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Full PDF Text Transcription

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Features  N-Channel  Enhancement mode  Very low on-resistance  Fast Switching  High Effective  Pb-free lead plating; RoHS compliant VSC080N06MS 60V/3A N-Channel Advanced Power MOSFET V DS R DS(on),typ@VGS=10V ID 60 70 3 SOT23 V mΩ A Part ID Package Type VSC080N06MS SOT23 Marking 003C Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation IS Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage and operating temperature range TC =25°C TA =100°C TC =25°C TC =25°C TC =25°C Thermal characteristics RJA Thermal Resistance Junctio
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