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VSB012N06MS - N-Channel Advanced Power MOSFET

Features

  • N-Channel.
  • Enhancement mode.
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • Fast Switching.
  • 100% Avalanche Tested.
  • Pb-free lead plating; RoHS compliant VSB012N06MS 60V/44A N-Channel Advanced Power MOSFET V DS 60 V R @DS(on),TYP VGS=10 V 9.5 mΩ R @DS(on),TYP VGS=4.5V 11 mΩ I D 44 A TDFN3.3x3.3 Part ID VSB012N06MS Package Type TDFN3.3x3.3 Marking 012N06M Tape and reel information 5000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbo.

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Datasheet Details

Part number VSB012N06MS
Manufacturer Vanguard Semiconductor
File Size 473.87 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSB012N06MS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSB012N06MS 60V/44A N-Channel Advanced Power MOSFET V DS 60 V R @DS(on),TYP VGS=10 V 9.5 mΩ R @DS(on),TYP VGS=4.5V 11 mΩ I D 44 A TDFN3.3x3.3 Part ID VSB012N06MS Package Type TDFN3.3x3.
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