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VSB012P03MS - P-Channel Advanced Power MOSFET

Features

  • P-Channel.
  • Very low on-resistance RDS(on) @ VGS=-4.5 V.
  • 100 Avalanche Tested.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Pb-free lead plating; RoHS compliant VSB012P03MS -30V/-36A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID -30 V 10 mΩ 14 mΩ -36 A TDFN3.3x3.3 Part ID Package Type VSB012P03MS TDFN3.3x3.3 Marking Tape and reel information 012P03M 5000pcs/reel Maximum ratings, at T j=25 °C, unless o.

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Datasheet Details

Part number VSB012P03MS
Manufacturer Vanguard Semiconductor
File Size 462.89 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet VSB012P03MS Datasheet

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Full PDF Text Transcription

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Features  P-Channel  Very low on-resistance RDS(on) @ VGS=-4.5 V  100 Avalanche Tested  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Pb-free lead plating; RoHS compliant VSB012P03MS -30V/-36A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID -30 V 10 mΩ 14 mΩ -36 A TDFN3.3x3.3 Part ID Package Type VSB012P03MS TDFN3.3x3.
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