VS6888AT mosfet equivalent, n-channel advanced power mosfet.
*Low On-Resistance
*Fast Switching
*100% Avalanche Tested
*Repetitive Avalanche Allowed up to Tjmax
*Lead-Free, RoHS Compliant
Description
VS6888AT de.
and a wide variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum .
VS6888AT designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These feature.
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