VS6808AH mosfet equivalent, dual n-channel advanced power mosfet.
Ron(typ.)=15 mΩ @VGS=4.5V
Low On-Resistance Fast Switching ESD Protection Green Product
Description
VS6808AH designed by the trench processing techniques to achieve .
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage
V.
VS6808AH designed by the trench processing techniques to achieve extremely low on-resistance,fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of D.
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